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| DSEC 16-04AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data VRSM V 400 VRRM V 400 DSEC 16-04AS A C A IFAV = 2x 10 A VRRM = 400 V trr = 30 ns TO-263 AB A A C (TAB) Type Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Weight Conditions TC = 140C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 60 0.5 0.2 -55...+175 175 -55...+150 A A A mJ A C C C W g Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications TC = 25C typical 60 2 Symbol IR Conditions TVJ = 25C; VR = VRRM TVJ = 150C; VR = VRRM IF = 10 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.12 1.53 2.5 A mA V V K/W ns 2.4 A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders VF RthJC trr IRM Advantages IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/s TVJ = 100C 30 2 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see IXYS Databook 2001 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-1 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 207 |
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